Electronics devices and semiconductor numerical

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Electronics devices and semiconductor numerical

Postby swatisvatii » Fri Dec 14, 2012 5:25 pm

The conc of hole-electon pairs in pure silicon at T=300K is 7*10^15 per cubic metre.Antimony is doped into silicon in a proportion of 1 atom in 10^7 atoms. Assuming half of the impurity atoms contribute electrons in the conduction band, the factor by which the number of charge carriers increases due to doping is? ( The number of silicon atoms per cubic metre is 5*10^28)
Answer is 2.5*10^21
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