ECE GATE 2012: Set A, Question 0

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ECE GATE 2012: Set A, Question 0

Postby Administrator » Sun Feb 12, 2012 11:49 am

Hi,

To discuss the paper as suggested earlier, post the pattern ID, and question number to start discussing.
For each question you could start a different thread.

General discussions, such as how tough the paper was etc. could be posted with appropriate subject in the post.
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please help

Postby swatisvatii » Fri Dec 14, 2012 5:28 pm

The conc of hole-electon pairs in pure silicon at T=300K is 7*10^15 per cubic metre.Antimony is doped into silicon in a proportion of 1 atom in 10^7 atoms. Assuming half of the impurity atoms contribute electrons in the conduction band, the factor by which the number of charge carriers increases due to doping is? ( The number of silicon atoms per cubic metre is 5*10^28)
Answer is 2.5*10^21
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