Built in potential in a Pn junction

Energy bands in silicon, intrinsic and extrinsic silicon. Carrier transport in silicon: diffusion current, drift current, mobility, and resistivity. Generation and recombination of carriers. p-n junction diode, Zener diode, tunnel diode, BJT, JFET, MOS capacitor, MOSFET, LED, p-I-n and avalanche photo diode, Basics of LASERs. Device technology: integrated circuits fabrication process, oxidation, diffusion, ion implantation, photolithography, n-tub, p-tub and twin-tub CMOS process.

Built in potential in a Pn junction

Postby pentium1000in » Sat Oct 26, 2013 12:05 pm

In a PN junction under equilibrium the built in electric field and hence the build in potential should exists from the ntype to the ptype material. Hence when an external forward bias voltage is applies its direction should be to oppose the built in potential. Hence the width of the depletion region should be proportional to sqrt(Vapplied-Vbi). But i have read in books that the potential is proportional to sqrt(Vapplied+Vbi).

Kindly enlighten
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